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| 2SA1889 Silicon PNP Epitaxial Application High frequency amplifier Features * Excellent high frequency characteristics fT = 300 MHz typ * High voltage and low output capacitance VCEO = -200 V, Cob = 5.0 pF typ * Suitable for wide band video amplifier * Complimentary pair of 2SC5024 Outline 2SA1889 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Tj Tstg 1 Ratings -200 -200 -4 -0.2 -0.5 1.4 8 150 -55 to +150 Unit V V V A A W W C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min -200 -200 -4 -- 60 100 -- -- 200 -- Typ -- -- -- -- -- -- -- -- 300 5.0 Max -- -- -- -10 120 200 -1.0 -1.0 -- -- V V MHz pF VCE = -5 V, IC = -30 mA I C = -30 mA, IB = -3 mA VCE = -20 V, IC = -30 mA VCB = -30 V, IE = 0, f = 1 MHz Unit V V V A Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -160 V, IE = 0 VCE = -5 V, IC = -10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio 2SA1889B 2SA1889C V(BR)EBO I CBO hFE hFE VBE VCE(sat) fT Cob Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance See characteristic curves of 2SA1810. 2 2SA1889 3 2SA1889 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4 |
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